Browsing by Subject "Band gaps"

Now showing items 1-16 of 16

    • Article  

      Carrier dynamics in Β-Ga2O3 nanowires 

      Othonos, A.; Zervos, Matthew; Christofides, C. (2010)
      Carrier dynamics have been investigated in Β-Ga2O 3 nanowires (NWs) grown by the vapor-liquid-solid mechanism, using ultrashort transient absorption spectroscopy in conjunction with time-correlating single photon counting ...
    • Article  

      Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition 

      Othonos, A.; Zervos, Matthew (2009)
      Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
    • Article  

      Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition 

      Othonos, Andreas S.; Zervos, Matthew (2009)
      Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
    • Article  

      Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers 

      Tsokkou, Demetra; Othonos, Andreas S.; Zervos, Matthew (2009)
      Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
    • Article  

      Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers 

      Tsokkou, D.; Othonos, A.; Zervos, Matthew (2009)
      Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
    • Article  

      High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition 

      Zervos, Matthew; Papageorgiou, Polina; Othonos, Andreas S. (2010)
      Indium sulphide nanowires (NWs) have been grown on Si via the reaction of In and InCl3 with H2S using chemical vapor deposition at temperatures as low as 250 °C. We find that the growth of InxSy NWs via the direct reaction ...
    • Article  

      High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition 

      Zervos, Matthew; Papageorgiou, P.; Othonos, A. (2010)
      Indium sulphide nanowires (NWs) have been grown on Si via the reaction of In and InCl3 with H2S using chemical vapor deposition at temperatures as low as 250 °C. We find that the growth of InxSy NWs via the direct reaction ...
    • Article  

      Surface-related states in oxidized silicon nanocrystals enhance carrier relaxation and inhibit auger recombination 

      Othonos, Andreas S.; Lioudakis, Emmanouil E.; Nassiopoulou, Androula Galiouna (2008)
      We have studied ultrafast carrier dynamics in oxidized silicon nanocrystals (NCs) and the role that surface-related states play in the various relaxation mechanisms over a broad range of photon excitation energy corresponding ...
    • Article  

      Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition 

      Zervos, Matthew; Othonos, Andreas S. (2009)
      Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...
    • Article  

      Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition 

      Zervos, Matthew; Othonos, A. (2009)
      Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...
    • Conference Object  

      Synthesis, crystal structure and thermoelectric properties of β-K 2Bi 8Se 13 solid solutions 

      Kyratsi, Theodora; Chung, D. Y.; Dyck, J. S.; Uher, C.; Lal, S.; Loo, S.; Hogan, T.; Ireland, J.; Kannewurf, C. R.; Hatzikraniotis, E.; Paraskevopoulos, K. M.; Kanatzidis, M. G. (Affiliation: Department of Chemistry, Michigan State University, East Lansing, MI 48824, United StatesAffiliation: Department of Physics, University of Michigan, Ann Arbor, MI 48109, United StatesAffiliation: Department of Electrical Engineering, Michigan State University, East Lansing, MI 48824, United StatesAffiliation: Department of Electrical Engineering, Northwestern University, Evanston, IL 60208, United StatesAffiliation: Department of Physics, Aristotle University of Thessaloniki, 54006 Thessaloniki, GreeceCorrespondence Address: Kyratsi, T.Department of Chemistry, Michigan State University, East Lansing, MI 48824, United States, 2003)
      Solid solution series of the type K 2Bi 8-xSb xSe 13, K 2-xRb xBi 8Se 13 as well as K 2B 18Se 13-xS x were prepared and the distribution of the atoms (Bi/Sb, K/Rb and Se/S) on different crystallographic sites, the band ...
    • Article  

      Thermoelectric properties and site-selective Rb+/K+ distribution in the K2-xRbxBi8Se13 series 

      Kyratsi, Theodora; Chung, D. Y.; Ireland, J. R.; Kannewurf, C. R.; Kanatzidis, M. G. (2003)
      β-K2Bi8Se13 possesses promising thermoelectric properties whereas Rb2Bi8Se13 does not. The formation of solid solutions between these two compounds was attempted to study the alkali metal distribution in the structure and ...
    • Article  

      Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation 

      Othonos, A.; Zervos, Matthew; Tsokkou, D. (2009)
      We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...
    • Article  

      Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation 

      Othonos, Andreas S.; Zervos, Matthew; Tsokkou, Demetra (2009)
      We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...
    • Article  

      Ultrafast time-resolved spectroscopy of In2 O3 nanowires 

      Tsokkou, Demetra; Othonos, Andreas S.; Zervos, Matthew (2009)
      Ultrafast carrier dynamics in In2 O3 nanowires with an average diameter of ≈100±20 nm grown by the vapor-liquid-solid method have been investigated in detail using differential absorption spectroscopy with femtosecond ...
    • Article  

      Ultrafast time-resolved spectroscopy of In2 O3 nanowires 

      Tsokkou, D.; Othonos, A.; Zervos, Matthew (2009)
      Ultrafast carrier dynamics in In2 O3 nanowires with an average diameter of ≈100±20 nm grown by the vapor-liquid-solid method have been investigated in detail using differential absorption spectroscopy with femtosecond ...